Sr. Principal Electrical Engineer
Posting Start Date: 10/27/26
Job Location(s): TX,Campbell Rd
Requisition ID: 78955
Job Description:
DescriptionSr Principal Modeling EngineerWe are seeking a highly skilled and experienced RF GaN Transistor Modeling Engineer to join our Modeling Team. The successful candidate will be responsible for the analysis, and development of accurate and predictive compact and behavioral models for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) used in high-frequency and high-power applications. This role involves close collaboration with process engineers, circuit designers, and product development teams to ensure our GaN technologies meet the highest performance and reliability standards for next-generation wireless communication systems.
ResponsibilitiesKey Responsibilities- Device Characterization: Define on-wafer and packaged device characterization plans, including DC, capacitance-voltage (CV), small-signal RF (S-parameters), noise, and large-signal measurements (e.g., load-pull, pulsed I-V).
- Model Development & Extraction: Develop and refine accurate, physics-based compact models for GaN HEMTs using industry-standard modeling tools and techniques (e.g., MVSG, ASM-HEMT, Angelov).
- Simulation & Validation: Utilize TCAD and circuit simulation tools (e.g., Keysight ADS, Cadence AWR/Spectre, Synopsys, Silvaco) to perform simulations, analyze data, and validate model accuracy against hardware measurements.
- PDK Development: Collaborate with the PDK Team and provide support for both internal and external customers.
- Cross-Functional Collaboration: Work closely with process engineers to link device performance to fabrication parameters, with reliability engineers to understand long-term device stability, and with circuit designers to ensure models meet their design requirements.
- Analysis & Troubleshooting: Conduct in-depth analysis of test data, identify device or measurement issues, and propose solutions for performance and yield improvement.
- Documentation & Reporting: Prepare detailed technical reports, documentation, and application notes for model usage and limitations.
- Innovation & Mentorship: Research and develop novel modeling solutions and characterization techniques, and mentor junior engineers or team members.
Required Experience and SkillsRequired Qualifications- Education: Master's or Ph.D. in Electrical Engineering, Applied Physics, or a related field with a focus on semiconductor devices.
- Experience: 15+ years of experience in semiconductor device characterization and modeling, specifically with RF GaN HEMT technologies.
- Technical Skills:
- Deep theoretical and practical understanding of GaN device physics and materials science.
- Proficiency with RF characterization equipment (network analyzers, spectrum analyzers, load-pull systems, probe stations).
Desired Experience and Skills- Expertise in industry-standard RF simulation and modeling tools (Keysight ADS, Cadence AWR, TCAD tools, etc.).
- Strong programming and data analysis skills (e.g., Python, MATLAB, C++) for automation and data interpretation.
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The typical base pay range for this role across the U.S. is currently USD $135,900 - $295,000 per year. Starting base pay will depend on relevant experience and skills, training and education, business needs, market demands, the ultimate job duties and requirements, and work location. Skyworks has different base pay ranges for different work locations in the U.S. Benefits include access to healthcare benefits (including a premium-free medical plan option), a 401(k) plan and company match, an employee stock purchase plan, paid time off (including vacation, sick/wellness, parental leave), among others. Employees are eligible to participate in an incentive plan, and certain roles are also eligible for additional awards, including recognition and stock. These incentives and awards are based on individual and/or company performance.
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