Full Job Description
Here's the Gist:
Wolfspeed's GaN Epitaxy R&D is looking for a scientist with understanding of GaN epitaxial crystal growth processes and characterization techniques needed to grow high quality thin films utilized in next generation power and Rf devices.
The Day-to-Day:
• Develop new and improved GaN epitaxial crystal growth processes
• Interpret characterization observations into meaningful action plans
• Review parametric data to drive process improvement and troubleshooting
• Define and own projects, plans, timelines, and deliverables through to completion
• Use effective written and verbal communication to present results to R&D and Production teams
• Interface with a broad range of technicians, engineers, and other technical staff in a community of shared resources
This Job is Right for You if You Have (Minimum Requirements):
• PhD in Materials, Chemical, Ceramics, Electrical Engineering, or Physical Science with 2+ years of related industrial R&D experience, MS degrees with 5+ years of experience will be considered
• Good understanding of wide band gap materials, vacuum technology, and basic device physics
• Statistical data analysis skills and experience with large data sets
• Basic understanding of New Product/Technology Introduction processes
• Attention to detail, strong organizational and communication abilities
• Excellent analytical and problem-solving skills
• Self-motivated with flexible, practical, and hands-on attitude
Skills That Will Set You Apart:
• Knowledge of SiC and GaN epitaxial growth and equipment requirements
• Practical experience with reactor hardware and process development
This role may require additional duties and/or assignments as designated by management.