What Your Job Will Be LikeWe are seeking an R&D molecular beam epitaxy (MBE) growth technologist to join our compound semiconductor microelectronics team. We work in a highly collaborative environment to conduct III-V compound semiconductor research and development using epitaxial growth and microfabrication processes for a wide variety of optoelectronic and microelectronic devices with direct impact to our national security mission. You will be expected to:
- Take engineering direction to perform creative research involving epitaxial growth using multiple state-of-the-art arsenide, phosphide, and antimonide MBE systems
- Collaborate closely with experts across and outside Sandia to realize high-quality epitaxial materials for programs ranging from fundamental research to small-scale device production
- Improve epitaxial material quality and design based on your understanding of their impacts on observed device performance
- Operate and maintain the integrity of our MBE systems and related facilities, characterize epitaxial materials, and fabricate and test devices
Due to the nature of the work, the selected applicant must be able to work onsite.
Salary Range$74,700 - $144,400
*Salary range is estimated, and actual salary will be determined after consideration of the selected candidate's experience and qualifications, and application of any approved geographic salary differential.
Qualifications We Require- Associates degree in STEM field or; HS diploma plus four (4) years of semiconductor processing or laboratory process experience
- Ability to obtain and maintain a DOE L-level security clearance
- Hands-on experience maintaining complex equipment and instrumentation
Qualifications We Desire- Bachelor's degree in a STEM field
- Experience with compound semiconductor processing
- Demonstrated problem solving skills
- Ability to prioritize work while supporting multiple projects
- Proven ability to work effectively and efficiently in a team environment
- Demonstrated attention to detail
- Experience in working with and maintaining ultra-high vacuum systems
About Our TeamThe III-V Microelectronics Department is responsible for the research and technology foundation of Group III-V compound semiconductors within the MESA: Microsystems Engineering, Science and Applications Center that enables the creation, development and delivery of microelectronic components addressing high-performance, harsh-environment communication, sensing and control problems. We work throughout the Technology Readiness Level range from TRL1 (basic principles observed and reported) to TRL6 (representative of the deliverable demonstrated in relevant environments), and partner as appropriate to assure the delivery of qualified products to our customers. Our Department focuses on providing customers with microtechnology or microsystems integration solutions to their problems, who need a trusted partner or supplier to create and deliver on stated performance, size, weight, power and cost benefits relative to alternatives. Meeting project milestones and delivery commitments are critical to success in our business. Core Department capabilities include electronic modeling and simulation; epitaxial design, growth and characterization; rad-hard microelectronic device and circuit design, microfabrication, characterization, and reliability; and high-reliability microelectronic product design, characterization, and delivery for high-consequence system applications.
Posting DurationThis posting will be open for application submissions for a minimum of three (3) calendar days, including the 'posting date'. Sandia reserves the right to extend the posting date at any time.
