10+ years' experience in photonics or related field
M.S. or Ph.D. in Physics, Electrical Engineering, or Material Science
Proven track record in III-V device design and characterization
Deep understanding of Lasers, EAM, MZM devices
Knowledge of epitaxy constraints and quantum effects
Proficiency with design software like Ansys Lumerical
Strong problem-solving skills in dynamic environments
Responsibilities
Design and simulate high-efficiency lasers and modulators
Model resistance and capacitance effects for RF performance
Perform impedance matching across wide frequency ranges
Establish design rules for DRC and layout
Direct HPIC layout of components
Conduct design validation testing and DOE
Support design reviews and present findings
Benefits
Dynamic startup environment that encourages innovation
Engagement in cutting-edge Si-Photonic technology development
Opportunity to work in diverse teams
Professional development and training opportunities
Flexible work culture with emphasis on collaboration
Full Job Description
The III-V Device Design Engineer for Silicon Photonics integration role is responsible for supporting the development of next generation Si-Photonic Data Communications solutions in Skorpios' Integration and Process Development Engineering team. The III-V Device Design Engineer will develop high performance III-V devices including high-power and high efficiency Laser, EAM and MZM high-speed modulators, Uni Traveling Carrier high-speed photodetectors. The design must be tailored for our unique technology platform and optimized for meeting challenging specs. The tasks include electrical, RF, and optical simulations, design for fabrication and testing, design review, working with layout engineers, characterization of devices, data analysis, and performance report.
Responsibilities:
Design, Model and Simulate high efficiency Laser, EAM and MZM high-speed modulators, Uni Traveling Carrier high-speed photodetectors.
Model and Simulate Resistance and Capacitance effects from EAM and MZM Modulators, Photodiodes and Laser Diodes to provide improved RF performance of the components into integrated circuits
Perform impedance matching over large frequency range
Establish tolerance and process design rules to enable DRC for Designs and Layouts
Direct PIC Layout of designed components
DOE Design and Design Validation Testing
Design Review Support and Presentation
Design for Manufacturability (DFM).
Establish schematics Designs for Layout.
Using computer software to design III-V components and optimize for RF performance of optical to electrical conversion efficiency.
RF device testing and electrical/optical s-parameter measurement and characterization
Competencies
Ability to work in an integrated and diverse team environment.
Ability to work with a large body of data and the necessary statistical analysis tools, and the ability to present the data and ideas to a diverse audience.
Good communication skills.
Ability to present complex problems to internal peers as well as potential customers
III-V and RF design circuitry skills
Problem solving and trouble shooting skills
Proficiency with Microsoft Excel
Proficiency with Software Design Tools like Ansis Lumerical
Interpersonal, verbal and written communication skills
Requirements
10+ years' experience
M.S. or Ph.D. in Physics, Electrical Engineering, Material Science or a related field. Photonics or a related discipline with emphasis in optical communications and high speed optical III-V components.
Deep understanding of Lasers, MZM, photodiodes and EAM devices is a must.
Extensive industrial experience in photonics (Si or III-V) device design and characterization is preferred, with a proven track record of success, from concept to manufacturing. Alternatively, PhD graduate who has done outstanding research work on directly related devices may be accepted for the position.
Solid understanding of Epitaxy constraints, band structures, quantum effects, carriers' diffusion, optical modes for optical communications.
Understand how to design various III-V devices, including high-power and high efficiency Laser, EAM and MZM high-speed modulators, Uni Traveling Carrier high-speed photodetectors.
Proficient in design and simulations for III-V active photonic devices.
Familiar with optoelectrical device characterization and analysis.
Familiar with components reliability concepts.
Able to work with processing engineers to define fabrication methods.
Strong problem-solving skills with demonstrated track of record.
Able to work hard in a dynamic start-up environment.
Thrives in fast-paced environment.
Excellent verbal and writing communication skills.
Preferred Education and Experience
Desired are candidates with significant industrial experience in the III-V components industry.
Ansys Lumerical, Zemax and Speos, JMP or Mini-Tab Experience preferred.
Work Authorization/Security Clearance Requirements
Authorization may be required to release covered technology to employees who are not U.S. citizens, U.S. nationals, lawful permanent residents, asylees, or refugees
