Epitaxy Engineer - III-V / MOCVD

Glint Tech Solutions LLC

$100K — $120K *
Pharmaceuticals & Biotech
Less than 5 years of experience
Job Overview by Ladders

Qualifications

  • 2+ years of hands-on experience with MOCVD epitaxial growth of III-V semiconductor materials.
  • Master's degree in Materials Science, Electrical Engineering, Chemistry, Physics, or related field; Bachelor's with significant industry experience considered.
  • Strong understanding of III-V semiconductor materials and processes.
  • Practical experience in operating and troubleshooting MOCVD reactors.
  • Familiarity with epitaxial material characterization techniques.
  • Experience with semiconductor lasers, photonics, or optoelectronic devices preferred.
  • Experience with InP, EML, DFB, or related laser structures is a significant advantage.

Responsibilities

  • Perform MOCVD epitaxial growth of III-V semiconductor materials for laser and detector applications.
  • Monitor and optimize MOCVD growth recipes and process parameters.
  • Support epitaxial material characterization and analysis.
  • Troubleshoot MOCVD process and equipment issues.
  • Improve material quality, process consistency, device performance, and yield.
  • Collaborate with process, device, characterization, R&D, and production teams.
  • Support MOCVD equipment maintenance and improve equipment reliability.
  • Maintain process documentation, experimental results, and quality records.

Benefits

  • Opportunities for professional development and training.
  • Collaborative work environment with cross-functional teams.
  • Access to cutting-edge technology and advanced research facilities.
  • Contributions to innovative projects in the photonics field.
Full Job Description
Position Overview

We are seeking an Epitaxy Engineer to support the development and production of III-V semiconductor laser and detector materials. This role will focus on hands-on MOCVD epitaxial growth, process optimization, material characterization, and production support for advanced photonic devices including EML and DFB lasers.

Key Responsibilities
  • Perform MOCVD epitaxial growth of III-V semiconductor materials for laser and detector applications.
  • Monitor and optimize MOCVD growth recipes and process parameters.
  • Support epitaxial material characterization and analysis.
  • Troubleshoot MOCVD process and equipment issues.
  • Improve material quality, process consistency, device performance, and yield.
  • Collaborate with process, device, characterization, R&D, and production teams.
  • Support MOCVD equipment maintenance and equipment reliability improvement.
  • Maintain process documentation, experimental results, and quality records.

Qualifications
  • 2+ years of hands-on experience with MOCVD epitaxial growth of III-V semiconductor materials.
  • Master's degree in Materials Science, Electrical Engineering, Chemistry, Physics, Chemical Engineering, or related field; Bachelor's degree with strong relevant industry experience may also be considered.
  • Strong understanding of III-V semiconductor materials and epitaxial growth.
  • Hands-on experience operating and troubleshooting MOCVD reactors.
  • Familiarity with epitaxial material characterization techniques.
  • Experience with semiconductor lasers, photonics, or optoelectronic devices is highly preferred.
  • Experience with InP, EML, DFB, or related laser structures is a strong plus.

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