This is an opportunity to join a top-notch low-voltage power MOSFET design team. As part of Renesas's Mobility, Infrastructure and IoT Power Business Division, this Engineer will work on next-generation power MOSFET products for multiple markets. We are seeking a Principal Device Design Engineer to develop cutting-edge switching power MOSFETs for 12V to 80V applications. You will participate in the full product cycle, from the conception of the architecture through final product characterization. This will involve the development of novel device structures, optimization for performance and ruggedness using TCAD simulation, and development of test and characterization methods to demonstrate device capability and limits. You will interface with process integration engineers to develop cost-effective, manufacturable designs and consult with IC design teams developing the MOSFET drivers. If you like problem-solving and challenging the status quo, we'd like to hear from you. What You'll Do 3 Develop high-performance power switching devices based on fundamental physical principles and available manufacturing capabilities 3 Develop proprietary process flows and identify critical design parameters and process variation sensitivities that affect manufacturability 3 Develop simulation experiments to identify critical process and design parameters and center them for reliability, performance, and manufacturability 3 Work closely with fab process engineers toward the development of new process recipes and design rules 3 Develop intelligent process and layout experiments for engineering lots to minimize development cycle time 3 Execute test mask and product mask layouts with support from CAE team 3 Identify testing requirements and techniques for new technologies and advise during characterization and testing 3 Analyze measured data on devices and test structures to optimize device design and process 3 Provide engineering support for existing power semiconductor products to maintain yield and performance Qualifications 3 Expertise in one or more of the following areas 3 Power Semiconductor Devices 3 Semiconductor Device Physics 3 Semiconductor Device Reliability 3 Semiconductor Manufacturing 3 Materials Science 3 TCAD modeling and simulation 3 Device layout 3 Understanding of switched-mode power applications 3 Implications of packaging and PCB parasitics during switching 3 Implications of package and PCB materials on thermal characteristics 3 Influence of / requirements for MOSFET driver 3 Desired experience 3 Demonstrated track record of commercially successful power MOSFET developments 3 Direct experience in advanced Switching Power MOSFET structures 3 Education 3 M.S. or Ph.D. in relevant field with 7+ years' experience in power semiconductor device engineering Additional Information At Renesas Electronics, we believe in rewarding our employees with a highly competitive compensation package. The base salary range listed above represents a good-faith estimate of the starting wage we expect to pay for this position upon hire. Individual placement within this range is determined by several factors, including the candidate's depth of relevant engineering or professional experience, specialized technical skill sets, advanced certifications, and internal equity constraints. We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process. Videos To Watch https://www.youtube.com/embed/k-zs4tB6nNc