Master's degree in Electrical Engineering or related field, focused on RF/microwave circuits design.
3+ years of experience designing RF power amplifiers up to 60GHz.
Experience with PA tapeout using GaN technologies.
Knowledge of RF GaN device physics including trapping and thermals.
Strong understanding of power amplifiers' modes, matching, and bias considerations.
Proficient in circuit design, IC layout, and simulation of RF PAs.
Familiarity with passive component EM knowledge.
Responsibilities
Design and develop RF power amplifiers for SATCOM, Wi-Fi, and cellular applications.
Collaborate with colleagues across organizational levels to solve problems and analyze data.
Create test plans to ensure reliability and performance of RF power amplifier designs.
Perform electromagnetic design using HFSS on various substrates.
Present detailed design reviews encompassing all aspects of RF design processes.
Stay updated on semiconductor technology trends and advancements.
Support all product development stages from concept to mass production.
Benefits
Equity Package
Comprehensive Health, Dental, and Vision Insurance
401(k) Retirement Plan
Paid Time Off (PTO) and Sick Leave
Full Job Description
RESPONSIBILITIES:
Design and develop RF power amplifiers for applications such as SATCOM, Wi-Fi, and cellular.
Collaborate effectively with colleagues at all levels within the organization, demonstrating problem-solving skills, data analysis, and critical thinking.
Create test plans for RF power amplifier designs to ensure reliability and performance under real-world conditions.
Perform EM design using HFSS on die, on package and on PCB.
Present detailed design reviews covering IC, package, electromagnetic (EM), simulation results, measurement data, and thermal considerations; all related to continuous improvement of RF design processes.
Stay on top of industry trends and advancements in semiconductor technology.
Support all stages of product development, from concept to mass production.
Requirements
Master's degree in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design.
3+ years of experience in RF power amplifier design and development up to 60GHz.
PA tapeout experience using GaN technologies.
Familiarity with RF GaN device physics, including trapping and thermals, and transistor models.
Strong knowledge of power amplifiers including modes of operation, matching, bias, and architecture considerations.
Strong circuit design skills, experience with IC layout, PEX extraction, performing electromigration analysis, and simulation of both linear and non-linear behavior of RF PAs to meet performance targets such as gain, linearity, power, and bandwidth.
Strong EM knowledge of passive components including couplers, baluns, and matching networks.
Proficiency in simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, Siemens Calibre, HFSS, Momentum, and EMX.
Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAM.
Preferred skills:
PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design.
Understanding of PA thermal and packaging constraints.
RF/microwave design experience in the Ku, K, Ka, Q, or V-band frequency ranges.
Familiarity with radio related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generators, and network analyzers, and hands-on experience in a lab with equipment for RF testing and measurement.
Benefits
Equity Package
Comprehensive Health, Dental, and Vision Insurance
