RF/mm-Wave CMOS Power Amplifier Design Engineer

Falcomm

$90K — $130K *
Telecommunications & Hardware
Less than 5 years of experience
Job Overview by Ladders

Qualifications

  • Masters or PhD in Electrical Engineering or related field, focusing on RF/microwave integrated circuits design.
  • 3+ years of experience in RF power amplifier design and development up to 60GHz.
  • Experience with PA tapeout using SOI or SiGe technologies.
  • Strong knowledge of differential and single-ended power amplifiers, their architectures, and operation modes.
  • Solid circuit design skills with experience in IC layout and simulation of RF amplifiers.
  • Proficiency in simulation tools like Cadence Virtuoso and Keysight ADS; experience with EM simulators.

Responsibilities

  • Design and develop RF power amplifiers for SATCOM, Wi-Fi, and cellular applications.
  • Collaborate with cross-functional teams to integrate designs into larger SoC systems.
  • Prototype and test designs to ensure reliability and performance in real-world conditions.
  • Present detailed design reviews covering all design aspects to improve RF processes.
  • Stay updated on industry trends and semiconductor advancements.
  • Support all stages of product development from concept to mass production.

Benefits

  • Competitive Salary and Equity Package
  • Comprehensive Health, Dental, and Vision Insurance
  • 401(k) Retirement Plan
  • Paid Time Off (PTO) and Sick Leave
Full Job Description
Responsibilities
  • Design and develop RF power amplifiers for applications such as SATCOM, Wi-Fi, and cellular.
  • Collaborate with cross-functional teams to integrate RF power amplifier designs into larger SoC systems.
  • Create prototype and test RF power amplifier designs to ensure reliability and performance under real-world conditions.
  • Present detailed design reviews covering IC, package, electromagnetic (EM), simulation results, measurement data, and thermal considerations; all related to continuous improvement of RF design processes.
  • Stay on top of industry trends and advancements in semiconductor technology.
  • Support all stages of product development, from concept to mass production.

Requirements
  • Masters or PhD in Electrical Engineering or a related field; with an educational emphasis on RF/microwave integrated circuits design.
  • 3+ years of experience in RF power amplifier design and development up to 60GHz.
  • PA tapeout experience using SOI or SiGe technologies.
  • Strong knowledge of differential and single-ended power amplifiers including modes of operation, matching, bias, and architecture considerations.
  • Strong circuit design skills, experience with IC layout, PEX extraction, performing electromigration analysis, and simulation of both linear and non-linear behavior of RF PAs to meet performance targets such as gain, linearity, power, and bandwidth.
  • Strong EM knowledge of passive components including couplers, baluns, and matching networks.
  • Proficiency in simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, Siemens Calibre, etc.
  • Experience with EM simulators such as HFSS, Momentum, and EMX.
  • Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAM
  • Must be willing to work on-site full-time at our office in Atlanta, GA.


Preferred Qualifications
  • RF/microwave design experience in the Ku, K, Ka, Q, or V-band frequency ranges.
  • Familiarity with radio related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generator, network analyzers, and hands-on experience in a lab with equipment for RF testing and measurement.
  • Excellent analytical and problem-solving skills to troubleshoot design issues.

Benefits
  • Competitive Salary and Equity Package
  • Comprehensive Health, Dental, and Vision Insurance
  • 401(k) Retirement Plan
  • Paid Time Off (PTO) and Sick Leave

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