Masters or PhD in Electrical Engineering or a related field focused on RF/microwave integrated circuits design
3+ years in RF power amplifier design up to 60GHz
Experience with PA tapeout using GaN technologies
Solid understanding of PA thermal and packaging constraints
Familiar with RF GaN device physics and transistor models
Strong circuit design skills including IC layout and electromigration analysis
Proficiency with simulation tools like Cadence Virtuoso and Keysight ADS
Responsibilities
Design and develop RF power amplifiers for various applications like SATCOM and cellular
Collaborate with colleagues at all levels, demonstrating problem-solving and critical thinking
Create test plans to ensure RF designs are reliable and perform well
Perform EM design using HFSS across different substrates
Present design reviews that cover various aspects of RF design
Stay updated with industry trends in semiconductor technology
Support product development from concept to mass production
Benefits
Competitive Salary and Equity Package
Comprehensive Health, Dental, and Vision Insurance
401(k) Retirement Plan
Paid Time Off (PTO) and Sick Leave
Full Job Description
RESPONSIBILITIES:
Design and develop RF power amplifiers for applications such as SATCOM, Wi-Fi, and cellular.
Collaborate effectively with colleagues at all levels within the organization, demonstrating problem-solving skills, data analysis, and critical thinking.
Create test plans for RF power amplifier designs to ensure reliability and performance under real-world conditions.
Perform EM design using HFSS on die, on package and on PCB.
Present detailed design reviews covering IC, package, electromagnetic (EM), simulation results, measurement data, and thermal considerations; all related to continuous improvement of RF design processes.
Stay on top of industry trends and advancements in semiconductor technology.
Support all stages of product development, from concept to mass production.
Requirements
Masters or PhD in Electrical Engineering or a related field; with an educational emphasis on RF/microwave integrated circuits design.
3+ years of experience in RF power amplifier design and development up to 60GHz.
PA tapeout experience using GaN technologies.
Understanding of PA thermal and packaging constraints.
Familiarity with RF GaN device physics, including trapping and thermals, and transistor models.
Strong knowledge of power amplifiers including modes of operation, matching, bias, and architecture considerations.
Strong circuit design skills, experience with IC layout, PEX extraction, performing electromigration analysis, and simulation of both linear and non-linear behavior of RF PAs to meet performance targets such as gain, linearity, power, and bandwidth.
Strong EM knowledge of passive components including couplers, baluns, and matching networks.
Proficiency in simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, Siemens Calibre, etc.
Experience with EM simulators such as HFSS, Momentum, and EMX.
Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAM.
Must be willing to work on-site full-time at our office in Atlanta, GA.
Preferred skills:
RF/microwave design experience in the Ku, K, Ka, Q, or V-band frequency ranges.
Familiarity with radio related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generator, network analyzers, and hands-on experience in a lab with equipment for RF testing and measurement.
Excellent analytical and problem-solving skills to troubleshoot design issues.
Benefits
Competitive Salary and Equity Package
Comprehensive Health, Dental, and Vision Insurance
