Renesas Electronics America

Senior Analog Engineering Manager

Renesas Electronics America$150K — $180K *
Information Technology
11 - 15 years of experience
Job Overview by Ladders

Qualifications

  • Bachelor's or Master's degree in Electrical Engineering (PhD preferred).
  • 12+ years of experience in analog/mixed-signal IC design focused on high-speed memory interfaces.
  • 5+ years of experience in people management and technical leadership.
  • Hands-on experience delivering DDR5 PHYs or transitioning late-stage DDR4 designs to DDR5.
  • Strong expertise in high-speed IO design, PLL/DLL clocking architectures, mixed-signal verification, and advanced CMOS for I/Os.

Responsibilities

  • Guide architecture and design of DDR5 PHYs and contribute to DDR6 architecture.
  • Provide technical oversight of analog and mixed-signal blocks such as TX/RX datapaths and advanced equalization circuits.
  • Drive closure on timing, jitter, noise, and robustness for DDR5/DDR6 data rates.
  • Lead post-silicon bring-up, debug, and yield improvement effort.
  • Build and mentor a team of designers focused on memory interfaces.
  • Set technical direction and performance expectations for senior engineers.
  • Own DDR5/DDR6 PHY execution for schedule, quality, and risk management.

Benefits

  • Competitive benefits package details to be discussed during the hiring process.
Full Job Description

We are seeking a Senior Analog Engineering Manager to lead the development of DDR5 and next-generation DDR6 PHY solutions for advanced SoCs. This role requires deep technical expertise in high-speed memory interfaces, combined with strong people leadership and program ownership.

The successful candidate will manage a team responsible for end-to-end delivery of high-performance, low-power DDR PHYs, from architecture through silicon bring-up, while shaping the roadmap for DDR6-class signaling and architecture

Job Description

Technical Leadership (DDR5 / DDR6)
  • Own and guide the architecture, design, and implementation of DDR5 PHYs and contribute to DDR6-ready architectures.
  • Provide technical oversight for critical analog and mixed-signal blocks, including:
  • High-speed TX/RX datapaths
  • Advanced equalization, termination, and training circuits
  • DLL/PLL-based clocking solutions for multi-GHz operation
  • Voltage, reference generation, and power-aware IO design
  • Drive closure on timing, jitter, noise, SI/PI, and PVT robustness for aggressive DDR5/DDR6 data rates.
  • Ensure compliance with JEDEC DDR5 specifications and alignment with evolving DDR6 standards and industry direction.
  • Lead post-silicon bring-up, characterization, debug, and yield improvement, including lab and customer-system correlation.

People & Organization Leadership
  • Build, lead, and mentor a team of analog and mixed-signal designers focused on high-speed memory interfaces.
  • Set technical direction, performance expectations, and development plans for senior and principal engineers.
  • Drive hiring, onboarding, and team scaling aligned with DDR5 production and DDR6 development needs.
  • Foster a culture of technical rigor, ownership, and execution excellence.


Program & Cross-Functional Execution
  • Own DDR5/DDR6 PHY execution balancing schedule, quality, and risk
  • Partner closely with: Digital PHY and controller teams SoC integration and system architecture, Package, PCB, SI/PI, and validation teams, Product, program management, and customers
  • Interface with foundries, IP vendors, and standards bodies as needed to ensure successful delivery and future readiness.

Methodology, Quality & Roadmap
  • Establish robust design and signoff methodologies for next-generation high-speed PHYs.
  • Drive continuous improvement in simulation accuracy, mixed-signal verification, and silicon debug efficiency.
  • Lead long-term DDR5 sustainment and DDR6 technology roadmap planning, including architectural trade-offs and scaling strategies.
  • Anticipate challenges from data-rate scaling, power efficiency, and advanced process technologies


Qualifications
  • Bachelor's or Master's degree in Electrical Engineering (PhD preferred).
  • 12+ years of experience in analog/mixed-signal IC design with deep focus on high-speed memory interfaces.
  • 5+ years of people-management and technical leadership experience.
  • Proven hands-on delivery of DDR5 PHYs or late-stage DDR4 designs transitioning to DDR5
  • Strong expertise in: High-speed IO design and signal integrity, PLL/DLL and low-jitter clocking architectures,Mixed-signal verification and silicon validation, Advanced CMOS process considerations for IOs

Preferred Qualifications
  • Direct involvement in DDR6 architectural studies or early-stage development.
  • Experience at advanced nodes (7nm, 5nm, and below).
  • Background in multi-generation memory PHYs or scalable PHY platforms.
  • Ability to lead teams delivering multiple concurrent tape-outs.
  • Strong written and verbal communication skills across technical and executive audiences.

Leadership Profile
  • High technical credibility with the ability to dive deep when needed
  • Strong execution mindset with disciplined risk management
  • Effective mentor and team builder
  • Strategic thinker with a roadmap-driven approach to DDR evolution
  • Comfortable balancing hands-on engagement with organizational leadership


Additional Information

We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.

Are you ready to join our team and shape the future with us?

Videos To Watch
https://www.youtube.com/embed/k-zs4tB6nNc

About Renesas Electronics America

Renesas Electronics America is a leading supplier of advanced semiconductor solutions including microcontrollers, SoC solutions and a broad range of analog and power devices, with operations spanning research, development, design and manufacturing for a wide range of applications.
Learn more about Renesas Electronics America
Size
2,000 employees
Industry

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