RELOCATION ASSISTANCE: No relocation assistance available

CLEARANCE REQUIRED FOR START: No

CLEARANCE TYPE: Secret

TRAVEL: Yes, 10% of the TimeDescription

The Semiconductor Materials group of Northrop Grumman Mission Systems (NGMS) is seeking a Semiconductor Materials Section Manager for Advanced Semiconductor Materials Development, reporting to the Department Manager for our Space Park Foundry (SPF). Located in Manhattan Beach, Los Angeles, we design, manufacture, and test semiconductor products for internal and commercial production customers, as well as emerging technology programs. Northrop Grumman's SPF semiconductor foundry is a unique capability supporting a range of production microelectronic devices (Gallium Arsenide, Gallium Nitride, and Indium Phosphide) and providing leading-edge technology development in electronics. Our devices enable a number of Northrop Grumman's ground, sea, air, and space systems. Join us to work with a talented, experienced team while helping serve your country.

Role:

The Semiconductor Materials Section Manager will lead a group of microelectronic semiconductor engineers responsible for sustaining and advancing compound semiconductor epitaxy technologies and characterization methodologies that enable innovative microelectronic solutions for our mission architectures. This is a role that serves as the technical lead for semiconductor materials, the materials point of contact for programs, and a functional manager. Responsibilities include hiring, training, conducting performance reviews, and overseeing the maintenance of molecular beam epitaxy (MBE) systems, relevant tools, and vendor relationships. This position is responsible for the smooth operation of a critical node in NGMS's microelectronics foundry process. All GaN, InP, and GaAs MMIC chips fabricated at NGMS use wafers grown by the Semiconductor Materials Department, and the Section Manager is responsible for all engineering activities related to wafer growth.

Basic Qualifications:

- Bachelor's Degree in a STEM (Science, Technology, Engineering or Mathematics) 8 years of semiconductor related experience or Master's Degree in a STEM and 6 years of semiconductor related experience

- Experience operating or maintaining a molecular beam epitaxy (MBE) growth system

- Knowledge of thin-film characterization techniques and ability to apply them to improve semiconductor material performance

- Demonstrated ability to lead a team of engineers and communicate effectively through written reports and verbal presentations

- Experience managing a team of 6 or more engineers

- U.S. citizenship required

- Ability to obtain and maintain Secret clearance required.

Preferred Qualifications:

- PhD in materials science, electrical engineering, chemistry, or physics with 4 years of semiconductor related experience

- Experience in semiconductor wafer fabrication processes, device design and modeling, and circuit design and simulation

Primary Level Salary Range: $161,100.00 - $241,700.00

The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions.

Depending on the position, employees may be eligible for overtime, shift differential, and a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.

The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates.