Qorvo is seeking a Senior EDA Applications Engineer with hands-on GaN and/or GaAs RF Power Amplifier (PA) design experience to define, deploy, and support next generation 5G NR and 6G PA and RF Front-End Module (FEM) development. This is a hybrid role: part senior PA designer, part EDA methodology owner. You will bring practical, hands-on PA design expertise to the EDA flows (ADS, HFSS, Cadence, Synopsys, and related tools) that RF, analog, mixed-signal, and digital design teams depend on - ensuring those flows are grounded in real design and correlation challenges, from initial architecture definition through high-volume manufacturing. Responsibilities: Hands-On PA/RF Design • Directly support the design of high-efficiency, high-linearity GaN and/or GaAs PAs and RF FEMs for 5G NR/6G, applying hands-on expertise to validate and continuously improve EDA methodology. • Lead or support the integration of PA dies into multi-chip modules (MCM), optimizing methodology and flows for size, cost, and thermal performance. EDA Applications Engineering & Methodology • Provide day-to-day applications support for PA, RFIC, analog, mixed-signal, and digital design teams using industry-standard EDA tools (Cadence Virtuoso/Spectre, Keysight ADS, Ansys HFSS, Synopsys HSPICE/PrimeSim/VCS, Xcelium, AWR, or equivalent). • Develop, qualify, and deploy RF/PA design flows spanning circuit-level simulation (ADS) and 3D electromagnetic simulation (HFSS), ensuring consistency between models and measured silicon performance for GaN/GaAs technologies. • Evaluate, benchmark, and deploy new EDA capabilities for custom RF/analog design, AMS simulation, and digital verification, prioritized against real PA design and correlation challenges. • Partner with EDA vendors to resolve technical issues, influence tool roadmaps, and pilot new capabilities relevant to GaN/GaAs RF design. • Build reference design flows, PDK enablement, reusable automation, and documented best practices spanning RF, analog, AMS, and digital methodologies. • Deliver hands-on training, documentation, and mentoring to raise designer proficiency; document and present methodology and design results to internal and external stakeholders. Required Qualifications: • Bachelors Degree in Electrical Engineering with 5+ years of industry experience in hands-on GaN and/or GaAs RF Power Amplifier design, or an advanced degree with equivalent experience. • Proven track record designing PAs/FEMs using GaN and/or GaAs (HBT, HEMT, or related) technologies for cellular, 5G NR, 6G, or other high-frequency applications. • Strong understanding of RF fundamentals, including S-parameters, impedance matching, stability, and linearity. • Extensive hands-on experience with ADS, HFSS, and Cadence for RF circuit and EM design. • Solid background in RF measurement and characterization, with the ability to correlate simulated models to measured silicon performance. • Demonstrated ability to translate hands-on design experience into scalable methodology, flows, and best practices for a broader design organization. • Excellent technical communication and presentation skills; ability to work independently in a fast-paced environment. Preferred Qualifications • Experience defining or deploying enterprise-wide EDA design flows and methodology across multiple design teams. • Knowledge of EM, package, thermal, and multi-physics simulation for RF front-end modules. • Direct experience collaborating with EDA vendors on tool qualification and roadmap development. • Experience carrying a PA or FEM design through the transition to high-volume manufacturing. • Working knowledge of Synopsys HSPICE/PrimeSim/VCS or Xcelium. Location: We are open to position being based in our Richardson TX or Apopka FL office. This position requires access to ITAR/EAR technologies. Applicant must be a US Person (US citizen, permanent resident, asylee, or refugee) or eligible to obtain necessary export authorizations. #LI-NN1