OverviewInSyS's Center for Advanced Imaging (CAI) is searching for a Principal CMOS/CCD image Sensor Development Engineer to help expand the Low Light CMOS Cameras and Space Qualified Sensors thrusts. CAI has four focused thrust areas providing innovative low light imaging, space qualified imaging, lidar imaging, and commercial OEM products. The candidate will be expected to support or lead technical and marketing activities for the domestic and international customer set and prime contractors doing government business. The role's objective is to position SRI for continued growth in monolithic CMOS, CCD, III-V and ROIC-based imaging technologies and products deployed in the commercial, government and military markets.
This position will work onsite in our Rochester, NY office.
Responsibilities
- Define the pixel architecture, layout/design, and corresponding process integration schemes.
- Design & layout of pixel test structures that will be required for pixel & process validation.
- Generate and evaluate process experiments for the optimization of Imager performance, quality, and manufacturability.
- Manage/support foundry level fabrication process of CMOS and CCD image sensor
- Work closely with other engineers in design, probe, characterization, and production to optimize pixel design & process
- Design and perform simulations of advanced CMOS, CCD and Lidar image sensors
- Work with mixed signal and digital design team to develop innovative next generation imaging architectures and technology platforms.
- Lead/support the new product introduction (NPI) projects and the programs in CMOS and CCD image sensors for internal/external customers
- Work closely with BD and engineering leadership to design/develop Imager technology to support the technology/product roadmap
- Develop and win externally and internally funded research, development, and product design programs.
- Lead/participate in the development of technical proposals in support of new business
Qualifications
- Bachelors or Masters in Optics, Physics, Electrical Engineering or a related field required, PhD desirable.
- 15+ years’ experience in CMOS image sensor design (Defense, Commercial).
- Due to US Government requirements this position requires US Citizenship and the ability to obtain/maintain a security clearance.
- Proficiency with Cadence Design Systems IC design tools (layout, LVS, DRC, Schematic) in CMOS/CCD image sensor.
- Proficiency on TCAD process simulation tools or optics/optoelectronics.
- In depth knowledge and process integration experience in the state-of-art CMOS/CCD image senor is preferred. (i.e. Backside illuminated Senor, Global shutter, 3d Wafer stacking)
- Ability to understand as well as create circuit layouts and schematics and run DRC and LVS.
- Knowledge on how to build topological and electrical design rules understanding limitations of fab tools is plus.
- Ability to travel up to 10% of the time if necessary.
The salary range is: $133,520-$200,0000. Salary ranges will vary and are based on several factors, including geographic location, market competitiveness and equity amongst internal employees in similar roles. Positions may also qualify for SRI's Pay for Outstanding Performance program or the annual Performance Based Compensation program. SRI also has a competitive benefits package, to view details please go to https://www.sri.com/resources/benefits/. SRI will accept applications until the position is filled.
