GlobalFoundries

Principal Engineer Technology Development (2027 New College Graduate)

GlobalFoundries$85K — $146K *
Consumer Technology
Less than 5 years of experience
Job Overview by Ladders

Qualifications

  • Ph.D. in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science, or related field.
  • Basic knowledge of semiconductor device physics and characterization.
  • Fluency in English (written and verbal).
  • Ability to work in a manufacturing clean room environment.
  • Proficiency in MS Office and statistical analysis including Cpk and Design of Experiments.

Responsibilities

  • Innovate with integration and device teams on advanced process modules.
  • Collaborate with fab teams to ensure successful technology development.
  • Support all technology development milestones from conception to manufacturing installation.
  • Design and execute experiments, analyze results for manufacturing assessments.
  • Adhere to safety and environmental programs in all activities.

Benefits

  • Accelerated training paths for new graduates.
  • Mentorship and networking opportunities.
  • Access to cross-functional working opportunities.
  • Talent mobility within the organization.
Full Job Description

New College Graduates Overview:

We offer many full-time employment paths for recent graduates, which provide accelerated training in a fast-paced work environment, cross-functional working opportunities, and talent mobility. New college graduates are provided with mentorship, networking, and leadership opportunities, which give our new team members life-long connections and skills.

Summary of Role:

We are seeking a highly motivated individual with interest in semiconductor process and device development to work with our Technology Development team in advancing world class differentiated semiconductor technologies for our 200mm manufacturing fabricator in Vermont (FAB9). New hires will immediately embed within our project teams of process, integration, and device engineers in developing new process flows in CMOS, SiGe, and GaN technologies, targeting new and improved RF applications.

Essential Responsibilities Include:

  • Innovate with integration and device team members in driving the integration of advanced process modules to be used in the technology to meet performance, reliability, yield, and cost objectives.
  • Interact with various colleagues in the broader fab teams that support technology development work, including test/characterization, failure analysis, unit process, reliability, manufacturing, and other research organizations, to facilitate and achieve program success.
  • Support technology development qualification milestones from conception through manufacturing installation. Support experimental design and execution. Analyze experimental and performance results, including constructional analysis, and inline measurement summarization for manufacturing capability assessments and defect level assessments.

Other Responsibilities:

  • Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.

Required Qualifications:

  • Ph.D. in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science, or related field from an accredited degree program.
  • A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing.
  • Fluency in English Language written & verbal.
  • Physical Capacity Demands some amount of time required to work in a manufacturing clean room with product handling.
  • Proficiency in MSOffice and Statistical Analysis including Cpk, Design of Experiments.

Preferred Qualifications:

  • Prior related internship or co-op experience.
  • Project management skills - the ability to innovate and execute solutions that matter; the ability to navigate ambiguity.
  • Strong planning & organizational skills.
  • Demonstrated ability to meet deadlines and commitments.
  • Strong written and verbal communication skills.
  • Excellent interpersonal skills, energetic, motivated, and self-driven.
  • Educational experience in modern device physics (FET, BJT, LDMOS, and HEMT devices, bulk and SOI device structures). Including associated electrical test and analysis methods of discrete device structures.
  • Experience in semiconductor processing in CMOS, SiGe, and/or GaN technologies for RF applications.

#NCGProgram

Expected Salary Range

$85,000.00 - $146,000.00

The exact Salary will be determined based on qualifications, experience and location.

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