Qorvo, Inc

Principal Design Engineer

Qorvo, Inc$170K — $221K *
Telecommunications & Hardware
8 - 10 years of experience
Job Overview by Ladders

Qualifications

  • 8+ years of experience in RF power amplifier design, preferably with a focus on GaAs technology.
  • Strong grasp of high-efficiency and high-linearity PA design techniques.
  • Solid understanding of GaAs HBT device physics under varying conditions.
  • Proficient in linear/nonlinear ADS simulations and EM simulation tools like FEM and HFSS.
  • Experience with RF test equipment for performance validation.
  • Excellent teamwork, communication, and organizational skills.
  • Bachelor's degree in relevant field; advanced degrees preferred.

Responsibilities

  • Design and simulate GaAs PA ICs and matching networks for cellular and Wi-Fi applications.
  • Conduct feasibility studies and design optimizations for power and efficiency requirements.
  • Collaborate with technicians and applications engineers for hands-on RF tuning.
  • Analyze data to validate designs against performance metrics.
  • Mentor team members on design principles and best practices.
  • Present findings through internal reports and at external seminars and conferences.
  • Engage with cross-functional teams for product development coordination.

Benefits

  • Opportunity for career growth through mentorship and high-visibility projects.
  • Access to cutting-edge technology in RF and microwave engineering.
  • Collaboration with cross-functional teams to enhance professional development.
  • Possibility to publish and present innovative research findings.
  • Welcoming environment for technical growth and contribution to the field.
Full Job Description
Locations considered for this role: San Jose, CA or Cedar Rapids, IA.

POSITION DESCRIPTION

We are looking for an experienced RF power amplifier (PA) design engineer in our advanced development team who will deliver new and innovative solutions for cellular and Wi-Fi applications in frequency range from 700 MHz to 7 GHz. The successful candidate will be responsible for the feasibility study, design, simulation, and layout of the GaAs PA IC as well as the accompanying laminate/IPD based matching networks using ADS and various EM simulation tools to meet simultaneous power, bandwidth, efficiency, and linearity requirements. This position also requires hands-on RF tuning skills at the bench alongside technicians and applications engineers to optimize the PA performance, and extensive data analysis skills to validate the design over PVT and VSWR. The successful candidate is also expected to mentor others in design concepts and best practices, and publish novel design work through internal/external reports, seminars, conferences and invention disclosures. This is a high visibility position and you will have the opportunity to interface with various product organizations and cross-functional teams in the company.

Requirements:
  • Demonstrated experience in cellular or Wi-Fi PA design using GaAs HBT based technologies.
  • Strong understanding of various high-efficiency and high-linearity PA design techniques and architectures including load and supply modulation.
  • Solid knowledge of GaAs HBT device physics over temperature, voltage/current and frequency.
  • Extensive experience in linear/nonlinear ADS simulations, and EM simulations through FEM, Momentum and/or HFSS.
  • Strong background in RF/microwave engineering, electromagnetics, analog circuits and wireless communications.
  • Must be experienced with RF/microwave test equipment such as network analyzer, probe station, source/load pull system, and signal sources/analyzers that deal with modulated signals.
  • Strong teamwork, communication, organization, and documentation skills.
  • Ability to work in a fast-paced environment to meet customer needs and schedules.
  • Detail oriented to ensure delivery of high yielding designs with good margin to specifications.
  • Bachelor's degree with 8+ years of related work experience and/or post-graduate degree is required.


Desired Qualifications:
  • Experience designing RFIC/MMIC and analog circuit blocks such as PAs, switches, LNAs, phase shifters, and/or attenuators using pHEMT, SiGe and/or SOI/CMOS-based technologies.
  • Experience with various PA linearization techniques.
  • Knowledge of Cadence and AWR Microwave Office schematic capture, layout and simulation tools is a plus.
  • Knowledge of data analysis and programming tools such as MATLAB, JMP, Spotfire, and AEL is a plus.
  • Published authorship in technical journals, conferences and/or magazines.
  • 15+ years of experience with M.S. or Ph.D. degrees is preferred.


Competitive base salary commensurate with experience: $170,300.00 - $221,500.00, relevant for the California Bay Area (subject to change dependent on physical location)

Posted salary ranges are made in good faith. Qorvo reserves the right to adjust ranges depending on the experience/qualification of the selected candidate as well as external competitiveness and internal comparability.

Base compensation is one element of Total Rewards offered at Qorvo. More information on the Total Rewards package can be shared upon request.

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About Qorvo, Inc

Qorvo, Inc is a semiconductor company that designs, manufactures, and supplies radio frequency (RF) solutions for smartphones, tablets, wireless infrastructure, defense and aerospace applications, and Internet of Things (IoT) applications. The company's products include amplifiers, filters, switches, and integrated modules that support a range of wireless communications standards. Qorvo was formed in 2015 as a result of the merger between RF Micro Devices and TriQuint Semiconductor. The company is headquartered in Greensboro, North Carolina.
Learn more about Qorvo, Inc
Size
8,900 employees
Market Cap
$9.1 billion
Industry
Net Income
$485.2 million
Founded
2013
5 Year Trend
+8.9%
Revenue
$3.7 billion
NASDAQ

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