Job DescriptionThe Director, Device Designand Integration Engineer will lead the device development of the new
low-
voltage GaN platform. This position will work with multiple function teams to cover from epi, device design, wafer fab process, testing to the final qualifications to deliver the new GaN platform.
Key Responsibilities
- Lead the LV GaN device group, and work closely with multiple functional groups to develop the GaN platform
- Design GaN structures and chips, meeting cost, performance and reliability specifications.
- Generate test and qualification protocols.
- Analyze on-wafer and in-package test results.
- Provide physics-based explanation for the observed behaviors.
- Ensure successful product qualification.
- Drive root cause investigation for performance or quality issues.
- Compile reports for internal and external communication.
Qualifications- Master's degree or PhD in Electrical Engineering or related fields, with 5+ years of GaN development experience
- Strong familiarity with GaN device physics, device design, wafer processing, layout and characterization. LV emode is a plus.
- Proficient in data manipulation and analysis skill. Familiar with JMP.
- Exceptional verbal and written communication skills.
- Self-motivated and adaptable. Able to work independently as well as in a team environment.
- Familiarity with reliability physics and failure analysis is a plus.
- Familiarity with JEDEC and AEC-Q101 qualification standards is a plus.
We have adopted a hybrid model that gives employees the ability to work remotely two days a week while ensuring that we come together as a team in the office the rest of the time. The designated in-office days are Tuesday through Thursday for innovation, collaboration and continuous learning.
Videos To Watchhttps://www.youtube.com/embed/k-zs4tB6nNc
