$150K — $200K *
In this position, the Senior R&D Device Engineer will work on new technology design and development for Vishay Power MOSFETs. Actively participate in R&D new device and technology developments including advanced device concepts in silicon and III-V compound semiconductors. Implement new product design and optimization using TCAD simulations. Work with marketing professionals to define new device and technology requirements. Work with process integration and module teams to determine the best technology to meet device requirements. Work on device and technology issues understanding and resolutions. Use available failure analysis techniques to identify and resolve device related issues.
Primary Responsibilities include the following:
• Develop new Power Device MOSFET technology platforms for commercial and automotive applications that have best in class performance based on advanced Power Device concepts for Silicon, Silicon Carbide and Gallium Nitride using extensive TCAD simulations.
• Design discrete Power MOSFET new products to meet required performance and electrical characteristics based on marketing inputs
• Use power device physics principles to understand and resolve device performance limitations, yield and reliability issues
• Communicate with marketing team to meet new products requirements.
• Prepare and conduct Design Review meetings
• Analyze electrical test data systematically and prepare technical reports and summaries
• Work with cross functional teams to implement device and technology development at different foundries.
• Attend meetings and work effectively with other staff members to resolve engineering problems.
• Communicate effectively with foundries and provide technical guidance for development and manufacturing
• Additional duties may be assigned for special projects
Successful candidate will have PhD in Electrical Engineering, with focus on Power MOSFET Device Physics and Design.
10+ years of relevant experience in Power Semiconductor devices with Silicon, Silicon Carbide and Gallium Nitride and TCAD simulations, device design and technology development. Deep knowledge and understanding of charge balance concepts and approaches in Power Device design in the 20 to 250 V range. Analytical thinking and approaches to solve technical problems.
Exceptional recent graduates in Power Devices may also be considered with documented achievements and excellent references
Valid through: 6/22/2021