Senior MBE Growth Production Engineer

Teledyne Technologies Inc   •  

Camarillo, CA

Industry: Manufacturing & Automotive

  •  

11 - 15 years

Posted 50 days ago

Company Overview

Teledyne Imaging Sensors who is the leader in the HgCdTe focal plane arrays announces the opening of a new position at its Camarillo, California facility. This position offers a unique opportunity as a Senior Member of the Molecular Beam Epitaxy (MBE) Growth Technical Staff involved in the development and production of the world's most advanced infrared imaging sensors.


Position Summary and Responsibilities

Teledyne Imaging Sensors produces image arrays for specialized and demanding applications, which requires a highly skilled cross functional team. The competencies include many specialties such as detector design and fabrication, materials science, integrated circuit design, mechanical and thermal packaging, electronics, and software.

Teledyne Imaging Sensors is recruiting a Senior MBE Growth Engineer in the Infrared Materials Group.

The ideal candidate is a "hands-on" technical person that is interested in pursuing the state-of-the-art in the MBE growth and infrared detector technology. The candidate not only excels in the MBE growth production but also enjoys working in teams as well as shines at communicating technical ideas with team members and customers.

The Infrared Materials Group is responsible for the MBE growth and characterization of all of Teledyne's HgCdTe wafers for the fabrication of high performance infrared detectors and arrays. As a senior member of the Infrared Materials group, the new hire will be responsible for the MBE growth and characterization of HgCdTe wafers in support of Teledyne's Imaging Operations on one or more MBE tool. This involves complete MBE tool ownership from tool use planning, maintenance and repair, growth structure design, recipe writing, layer growth, post growth characterization and correlation of results with final device performance. As a senior member of MBE growers, the new hire will also be involved in the training of junior engineers on tool operation, layer growth and characterization techniques.

As a senior member of the technical staff, another part of the responsibilities will be the innovation of new growth and characterization techniques for continual process improvements for yield enhancement and increased wafer throughput. The candidate will be responsible for proposing and managing small projects for continual process improvement for yield enhancement and increased layer throughput. The ideal candidate will also function as a Principal Investigator (PI) or Focal Plane Engineer (FPE) on selected programs. This involves complete ownership of technical, cost and schedule of a product from the initial proposal phase and planning to final delivery of the product to a customer.

In addition to a very strong technical skill set, the ideal candidate will have strong written and verbal communication skills. The candidate will also need to have strong interpersonal relationship skills and be an effective team member. As a senior member of the technical staff, the ability to present data to internal and external customers effectively as well as communicate in a clear manner is crucial. The candidate must be comfortable presenting data at program reviews, technical interchange meetings and industrial conferences.

Qualifications

Knowledge, Skill and Ability Requirements:

  • Direct "hands-on" experience and expertise with MBE growth of HgCdTe is required. Direct prior experience with III-V or other II-VI semiconductors is desirable.
  • Direct "hands-on" experience in MBE tool maintenance and repair. Self starter to be "hands-on" in the laboratory working with the technical team maintaining and operating a MBE tool.
  • Direct "hands-on" experience in the MBE growth in the production setting. Track record of successful production execution.
  • Direct "hands-on" experience as a Principal Investigator (PI) or Lead Project Engineer working in integrated product teams. Capable of project management.
  • Direct "hands-on" experience working on and leading yield enhancement and cost reduction projects.
  • Direct "hands-on" experience and expertise in semiconductor material characterization (structural, electrical and optical).
  • Working knowledge and direct prior experience using statistical process control (SPC) methods in a development and production environment.
  • Strong background in opto-electronic semiconductor devices, optics, electronics, software, cryogenics, radiometric, and modelling, test and analysis methods.
  • Direct prior experience in modeling infrared detector performance and correlating detector performance to MBE growth and device processing parameters.
  • Direct prior experience writing technical proposals, project reports and journal articles.
  • Direct prior experience and comfortable presenting technical data and presentations to internal staffs and external customers as part of program reviews, marketing efforts and in support of technical proposals.
  • Strong critical thinking and strong leadership qualities. Empowering others with a sense of humility
  • Excellent verbal and written communication skills.
  • Always curious, self-organizing, focused, goal centered with a strong work ethics.

Qualification, Education and Experience Requirements:

  • PhD degree in Engineering, Physics, or related field.
  • Ten plus (10+) years of related work experience in MBE growth and characterization of HgCdTe.
  • Five plus (5+) years of experience successfully leading technical teams and technical projects.
  • Strong working knowledge of semiconductor device processing and device physics.
  • US Citizenship is required for this position due to ITAR restrictions.
  • Ability to obtain high level security clearance is a plus.