Principal Device Engineer - NVM & RF Modeling / Characterization
Our Modeling and Characterization Group within the Global Technology Innovation organization is located in Chandler, AZ and is part of NXP’s Front-End Innovation Technology group. Our department is responsible for characterizing the state-of-art NVM and analog/RFtechnologies developed in NXP and in outside foundries, developing semiconductor models and methodologies, and extracting digital, analog and RF models for circuit design.
Scope of Responsibilities/Expectations
This person will have responsibility for semiconductor device modeling and characterization for NVM and RFtechnologies, which include devices such as NVM, MOSFETs resistors, capacitors, inductors, VVCs, and BJTs. Specific activities may include foundry models evaluation, electrical characterization of devices including digital and analog/RF behavior, investigating layout parasitic extraction, statistical data analysis for technology transfer between foundries and fab support, test structure development, model extraction and designers support.
The candidate should have knowledge of semiconductor devices including digital, NVM, analog and RF behaviors, silicon processes, circuit simulation (SPICE-like simulators), programming languages (Phyton, Pearl), compact models and model extraction techniques and use of IC-CAP software. Understanding of NVM and RF design needs is required. Must be proficient in layout parasitic extraction, use of Cadence tools and simulation techniques, writing test programs. Otherdesired skills include effective communication (verbal and written), familiarity with various physical analysis techniques, understanding of circuit layouts and hands-on device experience in electrical characterization and solid analytical and problem-solving skills. Minimum Master Degree in ElectricalEngineering and 5years of industry experiencerequired.