Device Scientist / Device Engineer (GaN)

Cree   •  

Research Triangle Park, NC

Industry: Manufacturing

  •  

Not Specified years

Posted 59 days ago

This job is no longer available.

Job Description

Wolfspeed (Cree’s Power & RF division) has an opening in R&D for a Device Scientist for RF device and MMIC technology development. This will be a technical lead on efforts to develop the Wolfspeed GaN HEMT technology for a Telecom Market Segment. The position will entail all aspects of developing the technology for these purposes including RFsemiconductor device design, MMIC/device process development and measurement.

What can Wolfspeed do for you?

  • We can offer an opportunity to enter into breakout field of wide-bandgap technologies for worldwide telecommunications market
  • Technically challenging device and process development that can have high-impact to business growth
  • Potential for high visibility in your field, working for the leader in wide-bandgap technology and manufacturing

What can you do for Wolfspeed?

  • Develop GaN HEMT S-, C-, Ku-band and MMW device and MMIC technology for improved telecom performance.
  • Develop advanced process flows, travelers and inspect wafers through the fabrication process.
  • Prepare scientific and technical proposals for securing funding from various Government funding agencies.
  • Make technical presentations. Be able to travel.
  • Coordinate with team of scientists, engineers, and technicians to develop fabrication processes for Ku-band and MMW devices and MMICs.

What you need for success:

  • PhD in Electrical Engineering, Materials Science, or related field is required.
  • Extensive experience in III-V or GaN-related microwave device development.
  • RF device design for linearity improvement.
  • Previous hands-on experience with physical device modeling techniques.
  • Must be able to obtain and maintain US Secruity Clearance.

Highly preferred skills and certifications:

  • 5+ years experience in design and fabrication of RF microwave and MMW devices, particularly those requiring e-beam lithography.
  • RF measurement experience at Ku-band and MMW frequencies a strong plus.
  • RFcircuit design background a strong plus.
  • Current Department of Defense Security Clearance.
  • Areas of competence should include Etch, Photolithography, Metal deposition, Diffusion, Wet Processing, Implant, NPI, DOE’s and backend processing.
  • Ability to develop custom device testing methods: DC, Pulsed and RF.
  • Familiar with the basics of databases and statistical process control.
  • Software and programming background: VisualBasic, LabView, JMP scripting or other environments.

2017-4562